A Novel Method to Obtain Reverse Bias I–V Curves for Single Cells Integrated in Photovoltaic Modules
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Department of Electronics, Faculty of Technology, University of M’sila, 28000 M’sila, Algeria
Corresponding author
Drif Mahmoud
Department of Electronic, Faculty of Technology, University of M’sila, P.O. Box 166, 28000 M’sila, Algeria
Power Electronics and Drives 2024;9 (44):412-427
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ABSTRACT
Despite the existence of accurate mathematical models facilitating the analysis of photovoltaic (PV) sources’ behaviour under diverse
conditions, including normal operation and situations involving mismatch phenomena such as partial shadowing and various faults (i.e.,
PV cells operating in forward bias and reverse bias quadrants), an important issue still persists. Crucial parameters essential for adjusting
these models, particularly those related to reverse-biased characteristics such as breakdown voltage, are often absent in manufacturers’
datasheets. This omission presents a substantial challenge, as it restricts the ability to acquire comprehensive and accurate information
required for a thorough analysis of devices in the second quadrant. To address this issue, our research introduces a novel method for
measuring the reverse-biased I–V characteristics of individual PV cells within a module without having to dissociate them from the
PV module encapsulants. The process involves measuring the forward-bias I–V curves of both the fully illuminated PV module and a
partially shaded PV module with only one completely shaded cell. This can be achieved outdoors and by utilising commercially available
I–V tracers. Thus, the reverse I–V curve can easily be derived from these forward bias I–V curves. Finally, the proposed method serves
as a nondestructive technique for characterising solar cells in the second quadrant. This innovative approach offers a promising solution
for assessing the performance and health of PV modules without causing damage and may result in significant cost savings.