The proposed work is improvised value engineered modifications for the basic interleav-ed boost converter (IBC) by including relevant modifications in circuits, which is ex-pected for a better performance in switching with reduction in losses. The new modified IBC circuit with insulated-gate bipolar transistor (IGBT), converter has been experiment-ed by simulations and the results are tabulated to modified IBC with metal oxide silicon field effect transistors (MOSFETs). Further experimental analysis and validations of the proposed simulation with hardware developed adopting model SKM195GB066D con-sisting IGBTs is presented. The work further enhances and summarizes the optimum utilization and the performance of IBC with the proposed IGBT modules that synchro-nises power diode. Enhancing the simulation outcomes the hardware is proposed and developed to be tested for a load up to 1.5kW with the evaluation of key parameters such as efficiency of the converter